In the past Eunkyeom Kim has collaborated on articles with Daeho Son and Chan Park. One of their most recent publications is Characteristics of Schottky barrier silicon nanocluster floating gate flash memory. Which was published in journal Thin Solid Films.

More information about Eunkyeom Kim research including statistics on their citations can be found on their Copernicus Academic profile page.

Eunkyeom Kim's Articles: (3)

Characteristics of Schottky barrier silicon nanocluster floating gate flash memory

AbstractThe silicon nanocluster floating gate memory device based on the Schottky barrier metal-oxide-semiconductor field effect transistor (SB-MOSFET) was proposed. The silicon nanoclusters were formed via the digital gas-feeding low pressure chemical vapor deposition. Erbium silicide process was used to form the Schottky junctions at the source/drain. In addition to the SB-MOSFET operation, the program/erase times of the nonvolatile memory device were determined to be 10 ms and 100 ms under the + 18 and − 18 V gate bias conditions, respectively. Maximum memory window was 5.5 V and the charge retention characteristics were maintained with a memory window of 0.5 V at 106 s.

Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

AbstractThe digital gas-feeding method was used in this study, with Si2H6 as the source gas, in a low-pressure chemical-vapor deposition system, to grow Si nanoclusters with high densities and uniform sizes. The densities of the Si nanoclusters rose to 7 × 1011 cm−2, and their sizes slightly changed at about 7 nm based on the frequency of gas-pulse feeding in the digital process. MOSFETs containing Si nanoclusters as a floating gate in the gate stack were fabricated, and the various nonvolatile-memory characteristics of MOSFET were investigated. The total threshold voltage shift of 3.7 V was achieved, and the program/erase times were found to be 5 μs/50 ms when the program/erase voltages were +18/−20 V, respectively. The charge-storage memory window was extrapolated over 1 year to be 1.5 V in the retention measurements of the fabricated Si nanocluster floating-gate memory device.

Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect

AbstractThe density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si2H6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.

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