Large negative persistent photoconductivity of bulk GaAs1–xPx (x = 0.02–0.03) single crystals
Review articleOpen access

AbstractIt is known that n-type GaAs under hydrostatic pressure at low temperature exhibits negative persistent photoconductivity (NPPC) related to the EL2 defect. In this paper we present the observation of NPPC in GaAs1–xPx bulk mixed crystals with x = 0.02–0.03 at ambient pressure. The growth of single crystals by the liquid encapsulated Czochralski method is described and discussed. Selected samples of GaAs1–xPx with energy gap higher than that of GaAs by about 20–30 meV were investigated by optical absorption and photo-Hall measurements in the temperature range 10–60 K at ambient pressure.

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