The characterization of semiconductor layer and interface quality with special reference to raman spectroscopy
Review articleOpen access
J. Geurts - No affiliation found
1996/01/01 Full-length article DOI: 10.1016/0960-8974(96)00003-4
Journal: Progress in Crystal Growth and Characterization of Materials
AbstractThis article gives a survey over the application of Raman spectroscopy (inelastic light scattering) for the characterization of semiconductor heterostructures, considering the quality of epitaxial layers and their interfaces. Theoretical considerations of Raman scattering are briefly reviewed. Experimental results are presented for various systems of III–V and II–VI compounds. Aspects of interest are crystalline quality, strain, composition of mixed compounds, chemical reactions at interfaces, doping efficiency and implications of interface quality for electronic properties.
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