Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces
Review articleOpen access

AbstractResults of excitation density and temperature dependent photoluminescence experiments on In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10–20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.

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