Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance
Review articleOpen access
1995/06/01 Full-length article DOI: 10.1016/0169-4332(95)00020-8
Journal: Applied Surface Science
AbstractThe capacitance of a Schottky barrier diode is evaluated considering the effects of deep-level impurities and the series resistance of the device. Because of the series resistance, the forward capacitance-voltage characteristics of the diode exhibit a peak. It is found that deep levels have a significant effect on the capacitance peak. The capacitance peak increases with increasing density of deep levels and decreasing value of the activation energy of the levels.
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