Tantalum oxide film deposition by laser ablation
Review articleOpen access
Abstract:

AbstractAmorphous tantalum oxide films have been prepared by the ArF excimer laser ablation of Ta2O5 in the presence of O2. The deposition rate increases linearly with an increase in the laser energy. The substrate temperature does not influence the deposition rate at an O2 flow rate of 5 sccm. But at an O2 flow rate of 100 sccm, the deposition rate decreases strikingly with the substrate temperature. The refractive indices to the films tend to be low under mild deposition conditions.

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