Section X. Radiation damageRetention and release of deuterium implanted into VCx (x = 0.44–0.95)
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Abstract:

AbstractThe concentration depth profiles of D2+ ions of 5 keV implanted into four kinds of VCx, specimens with different compositions of x = 0.44–0.95 have been measured as a function of the fluence using elastic recoil detection (ERD) analysis. For the specimens VC0.68, VC0.78 and VC0.95, the deuterium is retained near its projected range and the amount of deuterium tends to saturate at a fluence higher than about 3 × 1017D+/cm2. From the D concentration profile at saturation, the saturation concentration ns is evaluated to be 0.17 D-atoms/host atom. On the other hand, the deuterium in VC0.44 easily diffuses away from the surface regions to the interior. The thermal desorption spectra of deuteium are measured to evaluate the binding energy, Eb, of D in VC0.95. Assuming first order kinetics for detrapping, Eb is estimated to be 1.1 eV. The D saturation concentration, ns, as well as the binding energy, Eb, of D in VC0.95 are much smaller than those of SiC and TiC0.96.

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