Epitaxial BaF2 films on InP(100) deposited by r.f. magnetron sputtering
Review articleOpen access
Q.X. Jia - No affiliation found
1994/06/01 Full-length article DOI: 10.1016/0040-6090(94)90878-8
Journal: Thin Solid Films
AbstractEpitaxial BaF2 thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480°C by r.f. magnetron sputtering. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF2(200) was less than 0.8°. The X-ray pole figure investigation showed good in-plane alignment of the crystals. A scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology.
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