Epitaxial BaF2 films on InP(100) deposited by r.f. magnetron sputtering
Review articleOpen access

AbstractEpitaxial BaF2 thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480°C by r.f. magnetron sputtering. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF2(200) was less than 0.8°. The X-ray pole figure investigation showed good in-plane alignment of the crystals. A scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology.

Request full text

References (0)

Cited By (0)

No reference data.
No citation data.
Join Copernicus Academic and get access to over 12 million papers authored by 7+ million academics.
Join for free!