Small-signal switch model of GaN HEMTs for MMIC applications
Review articleOpen access
Du Lin - No affiliation found
2016/10/01 Full-length article DOI: 10.1016/S1005-8885(16)60058-4
Journal: The Journal of China Universities of Posts and Telecommunications
AbstractGallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 × 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due to the ON state and OFF state. The measurement results show a good agreement with the simulation results, which demonstrates the effectiveness of the proposed model.
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