Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells
Review articleOpen access
Abstract:

Highlights•Potential-induced degradation (PID) was observed in n-type Si PV modules.•PID in n-type Si PV modules is caused by enhanced front surface recombination.•Ionomer encapsulant significantly suppresses PID in n-type Si PV modules.

Request full text

References (0)

Cited By (0)

No reference data.
No citation data.
Advertisement
Join Copernicus Academic and get access to over 12 million papers authored by 7+ million academics.
Join for free!