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Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells

Kohjiro Hara - No affiliation found

2015/09/01 Full-length article DOI: 10.1016/j.solmat.2015.04.037 Journal: Solar Energy Materials and Solar Cells

Abstract:

Highlights•Potential-induced degradation (PID) was observed in n-type Si PV modules.•PID in n-type Si PV modules is caused by enhanced front surface recombination.•Ionomer encapsulant significantly suppresses PID in n-type Si PV modules.