Section 19. Sensors and other devicesThe fabrication and application of a novel OASLM based on a-Si:H and its alloy
Review articleOpen access

AbstractThe fabrication and operation of an optically addressed spatial light modulator (OASLM), consisting of a hydrogenated amorphous silicon (a-Si:H) p-i-n photodiode as the photosensor, a twisted nematic liquid crystal as the electro-optical modulating material and a hydrogenated amorphous silicon germanium layer (a-SiGex:H) as the light blocking material are described. The a-Si:H p-i-n diode and a-SiGex:H are deposited continuously in one reactant chamber by means of plasma enhanced chemical vapor deposition (CVD) methods with a shutter. The electric and optical characteristics were measured. Under a 300 lux illumination of white light, the OASLM exhibits a resolution of at least 20 line pairs/mm and a contrast ratio of more than 25:1. The writing sensitivity is about 3 lux. Finally, an attempt is made to realize optical logical processes using our OASLM. In one experimental system, sixteen real-time optical logical operations of two binary-state images are achieved.

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