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Simulation and modeling of C–V curves of OLEDs with trap states for the holes

G. Paasch - No affiliation found

2001/05/01 Full-length article DOI: 10.1016/S0379-6779(00)01332-1 Journal: Synthetic Metals

Abstract:

AbstractSimulations of dynamic capacitance–voltage (C–V) curves for organic light emitting diodes (OLED) with deep traps for the holes are presented. A systematic variation of parameters leads to clearly identifiable variations of the C–V curves. An equivalent circuit is deduced from the ac small-signal equations. In connection with the Nyquist representation of the dielectric function it is well suited to extract trap- and other material parameters from experiments.