Simulation and modeling of C–V curves of OLEDs with trap states for the holes
Review articleOpen access

AbstractSimulations of dynamic capacitance–voltage (C–V) curves for organic light emitting diodes (OLED) with deep traps for the holes are presented. A systematic variation of parameters leads to clearly identifiable variations of the C–V curves. An equivalent circuit is deduced from the ac small-signal equations. In connection with the Nyquist representation of the dielectric function it is well suited to extract trap- and other material parameters from experiments.

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