Electronic materialA two-stage method for growing large single crystals of diamond with high quality
Review articleOpen access
Wei Li - No affiliation found
1996/03/01 Full-length article DOI: 10.1016/0022-0248(95)00750-4
Journal: Journal of Crystal Growth
AbstractA novel method is reported for growing large single crystals of diamond at high pressure and high temperature using a metallic solvent, by which high-quality crystals can be grown with a larger net growth rate. The growing space has a recess at its lower temperature side, and the seed crystal is located at the bottom of the recess. The seed grows to fill the recess, and its extended top surface serves as a large seed for the second-stage growth. The main part of the crystals grown in the second stage is found to have no or only few metallic inclusions when the size of the recess is selected appropriately. Experimental results show that the growth rate is small for the first-stage growth within the recess, but it becomes larger after the crystal grows out of the recess. The diffusion field of carbon in the solvent is simulated by numerical calculation, and the results can reasonably explain this nature of the growth process.
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