Letter to the editorsA new magnetic-field applied pulling apparatus for LEC GaAs single crystal growth
Review articleOpen access
1983/10/01 Correspondence DOI: 10.1016/0022-0248(83)90236-1
Journal: Journal of Crystal Growth
Abstract:
AbstractA new magnetic-field LEC (MLEC) pulling apparatus has been developed. The MLEC apparatus consists of a superconducting magnetic field generator and an in-house modified high pressure puller. The superconducting magnets, used instead of normal-conducting magnets, were designed to have the ability to supply 3000 Oe (0.3 Wb/m3) transversely to the crucible center in the chamber. The temperature fluctuation of molten GaAs was markedly depressed from 18 to 0.1°C by applying more than 1250 Oe. GaAs single crystals of 2 inch diameter have been succesfully grown for the first time in the presence of the magnetic field.
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