Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures
Review articleOpen access
2002/05/08 Full-length article DOI: 10.1016/S0169-4332(01)00905-9
Journal: Applied Surface Science
AbstractThe current–voltage (I–V) and capacitance–voltage (C–V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature range of 80–320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features.
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