SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering
Review articleOpen access

AbstractThe continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

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