Epitaxial growth of nitride semiconductor films by laser ablation
Review articleOpen access

AbstractGaN epitaxial films on (0001) sapphire substrates were fabricated by laser ablation, An ArF excimer laser (193 nm, 25 ns) with an energy of 140 ml/pulse was used for ablating cold-pressed GaN targets made from high-purity GaN powders. Just before the deposition, thermal cleaning of the substrate surface at 1073 K was essential. The substrate temperature was varied between 873 and 1073 K, Above 973 K, the epitaxial layers were obtained, When a buffer layer of GaN was deposited at lower temperatures before the epitaxial growth, the crystalline quality and surface morphology were greatly improved.

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