Epitaxial growth of nitride semiconductor films by laser ablation
Review articleOpen access
A. Yoshida - No affiliation found
1999/04/01 Full-length article DOI: 10.1016/S0040-6090(98)01644-7
Journal: Thin Solid Films
AbstractGaN epitaxial films on (0001) sapphire substrates were fabricated by laser ablation, An ArF excimer laser (193 nm, 25 ns) with an energy of 140 ml/pulse was used for ablating cold-pressed GaN targets made from high-purity GaN powders. Just before the deposition, thermal cleaning of the substrate surface at 1073 K was essential. The substrate temperature was varied between 873 and 1073 K, Above 973 K, the epitaxial layers were obtained, When a buffer layer of GaN was deposited at lower temperatures before the epitaxial growth, the crystalline quality and surface morphology were greatly improved.
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