Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
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Abstract:

AbstractWe have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using micro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states P′ between the S and P shells, and D′ between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton–exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs.

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